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  this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. may 2014 docid022133 rev 3 1/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 n-channel 1200 v, 0.58 typ.,12 a zener-protected supermesh? 5 power mosfets in h 2 pak-2, to-220 and to-247 datasheet - preliminary data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra-low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. 1 3 2 tab 1 2 3 tab 1 2 3 h 2 pak-2 to-220 to-247 to-247 long leads d(2, tab) g(1) s(3) ( to-220, to-247 and to-247 long leads) (h pak-2) 2 d(tab) g(1) s(2, 3) am15557v3 order codes v ds r ds(on) max. i d p tot sth12n120k5-2 1200 v 0.69 12 a 250w stp12n120k5 STW12N120K5 stwa12n120k5 table 1. device summary order codes marking packages packaging sth12n120k5-2 12n120k5 h 2 pak-2 tape and reel stp12n120k5 to-220 tube STW12N120K5 to-247 stwa12n120k5 to-247 long leads www.st.com
contents sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 2/23 docid022133 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 h 2 pak-2, sth12n120k5-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, stp12n120k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-247, STW12N120K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 to-247 long leads, stwa12n120k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid022133 rev 3 3/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 30 v i d drain current at t c = 25 c 12 a i d drain current at t c = 100 c 7.6 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 48 a p tot total dissipation at t c = 25 c 250 w i ar (2) 2. pulse width limited by t jmax. max current during repetitive or single pulse avalanche 4a e as (3) 3. starting t j = 25 c, i d =i as , v dd = 50 v single pulse avalanche energy 215 mj dv/dt (4) 4. i sd 12 a, di/dt 100 a/ s, v peak v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (5) 5. v ds 960 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit h 2 pak-2 to-220 to-247, to-247 long leads r thj-case thermal resistance junction-case max 0.5 c/w r thj-amb thermal resistance junction-amb max 62.5 50 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w
electrical characteristics sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 4/23 docid022133 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 1200 v i dss zero gate voltage drain current v gs = 0, v ds = 1200 v 1 a v gs = 0, v ds = 1200 v, tc=125 c 50 a i gss gate body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 6 a 0.58 0.69 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds =100 v, f=1 mhz -1340- pf c oss output capacitance - 75 - pf c rss reverse transfer capacitance -2-pf c o(tr) (1) 1. time-related is defined as a constant equivalent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance, time-related v gs = 0, v ds = 0 to 960 v -128- pf c o(er) (2) 2. energy-related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance, energy-related -42-pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 3.5 - q g total gate charge v dd = 960 v, i d = 12 a v gs =10 v (see figure 18 ) - 44.2 - nc q gs gate-source charge - 7.3 - nc q gd gate-drain charge - 30 - nc
docid022133 rev 3 5/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical characteristics 23 the built-in back-to-back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 600 v, i d = 6 a, r g =4.7 , v gs =10 v (see figure 20 ) -23-ns t r rise time - 11 - ns t d(off) turn-off delay time - 68.5 - ns t f fall time - 18.5 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 12 a i sdm source-drain current (pulsed) - 48 a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 12 a, v dd = 60 v di/dt = 100 a/ s, (see figure 19 ) - 630 ns q rr reverse recovery charge - 12.6 c i rrm reverse recovery current - 40 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt=100 a/ s, tj=150 c (see figure 19 ) - 892 ns q rr reverse recovery charge - 15.6 c i rrm reverse recovery current - 35 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d = 0 30 - v
electrical characteristics sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 6/23 docid022133 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for h 2 pak-2 and to-220 figure 3. thermal impedance for h 2 pak-2 and to-220 , '      9 '6 9  $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6 rq ?v pv ?v  7m ?& 7f ?& 6lqjohsxovh pv   *,3*6$ figure 4. safe operating area for to-247 and to-247 long leads figure 5. thermal impedance for to-247 and to-247 long leads , '      9 '6 9  $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6 rq ?v pv ?v  7m ?& 7f ?& 6lqjohsxovh pv   *,3*6$ figure 6. output characteristics figure 7. transfer characteristics , '      9 '6 9  $  9 9 9 *6 9   9 *,3*6$ , '      9 *6 9  $     9 '6 9 *,3*6$
docid022133 rev 3 7/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical characteristics 23 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature 9 *6       4 j q& 9     9 '' 9 , ' $       9 '6  9 '6 9 *,3*6$ 5 '6 rq      , ' $ :    9 *6 9   *,3*6$ &       9 '6 9 s)   &lvv &rvv &uvv   *,3*6$ ( rvv      9 '6 9 ?-         *,3*6$ 9 *6 wk      7 - ?& qrup     , ' ?$  *,3*6$     7 - ?&   5 '6 rq qrup 9 *6 9      *,3*6$
electrical characteristics sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 8/23 docid022133 rev 3 figure 14. normalized v (br)dss vs temperature figure 15. source-drain diode forward characteristics 9 %5 '66  7 - ?& qrup         , ' p$ *,3*6$ 9 6'  , 6' $ 9         7 - ?& 7 - ?& 7 - ?&  *,3*6$ figure 16. maximum avalanche energy vs starting t j ( $6   7 - ?& p-         , ' $ 9 '' 9 *,3*6$
docid022133 rev 3 9/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 test circuits 23 3 test circuits figure 17. switching time test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 10/23 docid022133 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid022133 rev 3 11/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 package mechanical data 23 4.1 h 2 pak-2, sth12n120k5-2 figure 23. h2pak-2 drawing 8159712_c
package mechanical data sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 12/23 docid022133 rev 3 table 9. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c1.17 1.37 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
docid022133 rev 3 13/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 package mechanical data 23 figure 24. h2pak-2 recommended footprint (dimensions are in mm) 8159712_c
package mechanical data sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 14/23 docid022133 rev 3 4.2 to-220, stp12n120k5 figure 25. to-220 type a drawing bw\sh$b5hyb7
docid022133 rev 3 15/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 package mechanical data 23 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 16/23 docid022133 rev 3 4.3 to-247, STW12N120K5 figure 26. to-247 drawing 0075325_g
docid022133 rev 3 17/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 package mechanical data 23 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 18/23 docid022133 rev 3 4.4 to-247 long leads, stwa12n120k5 figure 27. to-247 long leads drawing 7395426_g
docid022133 rev 3 19/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 package mechanical data 23 table 12. to-247 long leads mechanical data dim. mm min. typ. max. a4.90 5.15 d1.85 2.10 e0.55 0.67 f1.07 1.32 f1 1.90 2.38 f2 2.87 3.38 g 10.90 bsc h 15.77 16.02 l 20.82 21.07 l1 4.16 4.47 l2 5.49 5.74 l3 20.05 20.30 l4 3.68 3.93 l5 6.04 6.29 m2.25 2.55 v10 v1 3 v3 20 ? 3.55 3.66
packaging mechanical data sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 20/23 docid022133 rev 3 5 packaging mechanical data figure 28. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2
docid022133 rev 3 21/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 packaging mechanical data 23 figure 29. reel table 13. h2pak-2 tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 22/23 docid022133 rev 3 6 revision history table 14. document revision history date revision changes 23-aug-2011 1 first release. 17-jan-2013 2 ? minor text changes ? added: h 2 pak package ? the part number stb12n120k5 has been moved to a separate datasheet ? updated: section 4: package mechanical data ? updated: mechanical data for to-247 package 16-may-2014 3 ? the part numbers stfw12n120k5 has been moved to a separate datasheet ? added: to-247 long leads package ? modified: i ar , e as , dv/dt values in table 2 ? modified: the entire typical values in table 5 , 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? minor text changes
docid022133 rev 3 23/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 23 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com


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