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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. may 2014 docid022133 rev 3 1/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 n-channel 1200 v, 0.58 typ.,12 a zener-protected supermesh? 5 power mosfets in h 2 pak-2, to-220 and to-247 datasheet - preliminary data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra-low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. 1 3 2 tab 1 2 3 tab 1 2 3 h 2 pak-2 to-220 to-247 to-247 long leads d(2, tab) g(1) s(3) ( to-220, to-247 and to-247 long leads) (h pak-2) 2 d(tab) g(1) s(2, 3) am15557v3 order codes v ds r ds(on) max. i d p tot sth12n120k5-2 1200 v 0.69 12 a 250w stp12n120k5 STW12N120K5 stwa12n120k5 table 1. device summary order codes marking packages packaging sth12n120k5-2 12n120k5 h 2 pak-2 tape and reel stp12n120k5 to-220 tube STW12N120K5 to-247 stwa12n120k5 to-247 long leads www.st.com
contents sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 2/23 docid022133 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 h 2 pak-2, sth12n120k5-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, stp12n120k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-247, STW12N120K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 to-247 long leads, stwa12n120k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 docid022133 rev 3 3/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 30 v i d drain current at t c = 25 c 12 a i d drain current at t c = 100 c 7.6 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 48 a p tot total dissipation at t c = 25 c 250 w i ar (2) 2. pulse width limited by t jmax. max current during repetitive or single pulse avalanche 4a e as (3) 3. starting t j = 25 c, i d =i as , v dd = 50 v single pulse avalanche energy 215 mj dv/dt (4) 4. i sd 12 a, di/dt 100 a/ s, v peak v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (5) 5. v ds 960 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit h 2 pak-2 to-220 to-247, to-247 long leads r thj-case thermal resistance junction-case max 0.5 c/w r thj-amb thermal resistance junction-amb max 62.5 50 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w electrical characteristics sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 4/23 docid022133 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 1200 v i dss zero gate voltage drain current v gs = 0, v ds = 1200 v 1 a v gs = 0, v ds = 1200 v, tc=125 c 50 a i gss gate body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 6 a 0.58 0.69 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds =100 v, f=1 mhz -1340- pf c oss output capacitance - 75 - pf c rss reverse transfer capacitance -2-pf c o(tr) (1) 1. time-related is defined as a constant equivalent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance, time-related v gs = 0, v ds = 0 to 960 v -128- pf c o(er) (2) 2. energy-related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance, energy-related -42-pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 3.5 - q g total gate charge v dd = 960 v, i d = 12 a v gs =10 v (see figure 18 ) - 44.2 - nc q gs gate-source charge - 7.3 - nc q gd gate-drain charge - 30 - nc docid022133 rev 3 5/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical characteristics 23 the built-in back-to-back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 600 v, i d = 6 a, r g =4.7 , v gs =10 v (see figure 20 ) -23-ns t r rise time - 11 - ns t d(off) turn-off delay time - 68.5 - ns t f fall time - 18.5 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 12 a i sdm source-drain current (pulsed) - 48 a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 12 a, v dd = 60 v di/dt = 100 a/ s, (see figure 19 ) - 630 ns q rr reverse recovery charge - 12.6 c i rrm reverse recovery current - 40 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt=100 a/ s, tj=150 c (see figure 19 ) - 892 ns q rr reverse recovery charge - 15.6 c i rrm reverse recovery current - 35 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d = 0 30 - v electrical characteristics sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 6/23 docid022133 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for h 2 pak-2 and to-220 figure 3. thermal impedance for h 2 pak-2 and to-220 , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v p v ? v 7 m ? & 7 f ? & 6 l q j o h s x o v h p v * , 3 * 6 $ figure 4. safe operating area for to-247 and to-247 long leads figure 5. thermal impedance for to-247 and to-247 long leads , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v p v ? v 7 m ? & 7 f ? & 6 l q j o h s x o v h p v * , 3 * 6 $ figure 6. output characteristics figure 7. transfer characteristics , ' 9 ' 6 9 $ 9 9 9 * 6 9 9 * , 3 * 6 $ , ' 9 * 6 9 $ 9 ' 6 9 * , 3 * 6 $ docid022133 rev 3 7/23 sth12n120k5-2, stp12n120k5, STW12N120K5, stwa12n120k5 electrical characteristics 23 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature 9 * 6 4 j q & |